Integrated circuit having an antifuse and a method of manufacture
AssigneeInfineon Technologies AG
InventorRene Tews
Life of this patent
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Abstract
An integrated circuit is formed by a method having the steps of providing a circuit substrate with a first metallized region, providing a first insulation layer covered by a silicon layer, patterning the first insulation layer and silicon layer to form a first insulation region and first silicon region, then forming a second metallized layer on the silicon region, heating the material so that the second metal layer diffuses into the silicon layer to form a metal silicide region, which is subsequently covered by a second insulating layer having a contact with an interconnect to enable contacting an antifuse formed by the metal silicide region.
Claims11
A method for fabricating an integrated circuit, said method comprising the steps of preparing a circuit substrate;
- providing a first metallization region comprising a first metal in the circuit substrate;
- forming a first insulation layer over the entire surface of the circuit substrate;
- forming a silicon layer on the first insulating layer;
- providing a mask overlying the first metallization region, patterning the first insulation layer and the silicon layer to form a sandwich of a first insulation region and a silicon region, forming a second metallization region over the first insulation region and the silicon region, conditioning the stack so the metal of the second metallization layer and the silicon region diffuse together to form a conductive region of metal silicide above the first insulation region, etching the laterally remaining second metallization region to remove it, except in the conductive region of metal silicide, providing a second insulation region above the first insulation region and the conductive region, forming a contact in the second insulation region in order to make contact with the conductive region and providing an interconnect for electrical connection to the contact.
An integrated circuit having an antifuse structure, said integrated circuit comprising a circuit substrate having a first metallized region comprising a first metal in the circuit substrate, a first insulating region above the first metallized region, a conductive region comprising a metal suicide above the first insulation region, a second insulation region above the first insulation region and the conductive region, a contact in the second insulation region in order to make contact with the conductive region and an interconnect for electrical connection to the contact.
Dependencies are inferred from the claim text.