Semiconductor processing component
AssigneeGeneral Electric Company
InventorsThomas Bert Gorczyca, Margaret Ellen Lazzeri, Frederic Francis Ahlgren
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Abstract
A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.
Claims24
A semiconductor processing component comprising a quartz body which includes silicon oxide filled micro cracks.
A method of preparing a quartz body processing component for use in a semiconductor furnace, comprising cleaning said component to remove a build up silicon layer and to expose micro cracks in the surface of said component and to etch said cracks into trenches;
- applying a silicon layer onto said component to partially fill said trenches, and oxidizing at least a portion of said silicon to silica to further fill said trenches in the surface of said component.
A semiconductor processing component comprising a quartz body which includes silicon dioxide or silicon nitride capped micro cracks.
A semiconductor processing component comprising a quartz body which includes micro cracks sealed with a conformal layer of silicon dioxide, silicon nitride, silicon carbide or spin on glass.
A method of treating a quartz body processing component for a semiconductor furnace, comprising applying a coating selected from the group consisting of a silicon dioxide, silicon nitride, silicon carbide or spin on glass onto said component to seal micro cracks in the surface of said component.
Dependencies are inferred from the claim text.