Method of manufacturing semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsJunji Yamada, Yutaka Yamada, Junichi Ariyoshi
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Abstract
The method of manufacturing a semiconductor device comprises the steps of: forming a gate electrode on a semiconductor substrate through a gate insulated film; forming source/drain regions to be adjacent to the gate electrode forming an Al wiring through an interlayer insulating film covering the gate electrode; and implanting impurity ions into a surface of the semiconductor substrate using as a mask the Al wiring and a photoresist formed thereon, thereby writing information into each of elements constituting a mask ROM and changing an outputting manner at an output port.
Claims3
A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode on a semiconductor substrate through a gate insulated film;
- forming source/drain regions to be adjacent to said gate electrode;
- forming a metallic wiring through an interlayer insulating film covering said gate electrode;
- and
- implanting impurity ions into a surface of said semiconductor substrate using said metallic wiring and a photoresist formed thereon as a mask, thereby writing information into each of elements constituting a mask ROM and changing an outputting manner at an output port.
Dependencies are inferred from the claim text.