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US 2002/0173054 A1Published application
Method for fabricating ruthenium thin layer
AssigneeHynix Semiconductor Inc.
InventorYounsoo Kim
Life of this patent
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Abstract
A method for fabricating a Ru thin layer by using an atomic layer deposition (ALD) technique is disclosed. The method comprises the steps of loading a substrate into a reaction chamber for an atomic layer deposition, adsorbing RuXn (wherein n is 2 or 3), which is a Ru precursor, onto the substrate and injecting a reductive reaction gas into the reaction chamber.
Claims13
A method for fabricating a ruthenium (Ru) thin layer comprising:
- loading a substrate into a reaction chamber for an atomic layer deposition;
- injecting RuXn into the reaction camber, wherein n is 2 or 3, and adsorbing the RuXn onto a surfaced substrate;
- and
- injecting a reductive reaction gas into the reaction chamber.
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A method for fabricating a ruthenium (Ru) thin layer comprising:
- loading a substrate into a reaction chamber for an atomic layer deposition;
- injecting RuXn into the reaction chamber wherein n is 2 or 3 and adsorbing the RuXn onto a surface of the substrate;
- and
- injecting a reductive reaction gas into the reaction chamber, wherein the reductive reaction gas is a gas selected from the group consisting of hydrazine (N2H4), ammonia (NH3), NH2R, NHR2, NR3, C1˜C10 alkylhydrazine, C1˜C10 dialkylhydrazine and mixtures thereof and R is a material selected from the group consisting of hydrogen, C1˜C10 alkyl, C2˜C8 alkenyl, C1˜C8 alkoxy, C6˜C12 aryl and derivatives thereof including one or more halogen groups.
1 more element
Dependencies are inferred from the claim text.