Photomask and method of fabricating semiconductor device by use of same
AssigneeOki Electric Industry Co., Ltd.
InventorDaigo Hoshino
Life of this patent
Estimating the term…
Abstract
A photomask for use in a semiconductor fabrication process, comprises a plurality of first mask patterns for transferring resist patterns, and second mask patterns for restraining an optical proximity effect, each having a width not larger than a resolution limit. The second mask patterns are formed in a line-like shape, and disposed so as to link together the plurality of the first mask patterns. As a result of use of the second mask patterns in the line-like shape, a fewer parameters may be added in simulation of resist patterns. Thus, it becomes possible to provide the photomask for efficiently performing simulation and forming suitable resist patterns. Further, the photomask can be used in a semiconductor fabrication process.
Claims13
A photomask for transferring a plurality of patterns to an object for exposure, formed on a semiconductor substrate, comprising:
- a plurality of first mask patterns for transferring the patterns to the object for exposure, disposed apart from each other in a first direction;
- and
- second mask patterns each having a width not larger than a resolution limit, linked with one end of each of the plurality of the first mask patterns.
A photomask for transferring a plurality of patterns to an object for exposure, formed on a semiconductor substrate, comprising:
- a pair of first mask patterns in a line-like shape, each having a width not larger than a resolution limit, disposed apart from each other, and substantially in parallel with each other, in a first direction;
- and
- a plurality of first main mask patterns disposed apart from each other in a second direction orthogonal to the first direction, and linked together by the pair of the first mask patterns in the line-like shape.
A photomask for transferring a plurality of patterns to an object for exposure, formed on a semiconductor substrate, comprising:
- a pair of first mask patterns in a line-like shape, each having a width not larger than a resolution limit, disposed apart from each other, and substantially in parallel with each other, in a first direction;
- a plurality of first main mask patterns disposed apart from each other in a second direction orthogonal to the first direction, and linked together by the pair of the first mask patterns in the line-like shape;
- and
- second mask patterns in a line-like shape, each having a width not larger than a resolution limit, disposed between the pair of the first mask patterns in the line-like shape, substantially in parallel with the respective first mask patterns in the line-like shape, and apart from the pair of the first mask patterns in the first direction.
Dependencies are inferred from the claim text.