Method for forming interconnects on semiconductor substrates and structures formed

A semiconductor structure comprising:

• an insulating material layer on a top surface of the semiconductor structure,
• an interconnect opening having sidewalls and a bottom in said insulating material layer,
• a seed layer of a first metal on top of said diffusion barrier layer, said seed layer being formed of grains having an average grain size not smaller than 0.005 μm, and
• a filler layer of a second metal filling said interconnect opening formed of grains having an average grain size with a range of ±20% of the average grain size of said seed layer.

A method for forming metal interconnect in a semiconductor structure comprising the steps of:

• providing a semiconductor structure having an interconnect opening having sidewalls and a bottom formed therein,
• depositing a seed layer of a first metal having a thickness of at least 0.05 μm in said interconnect opening,
• removing a layer of said first metal from a top surface of said seed layer that is at least 20% the thickness of said seed layer, and
• depositing a filler layer of a second-metal in said interconnect opening overlaying said remaining seed layer such that said filler layer of said second metal has an average grain size larger than 0.005 μm.