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US 2002/0171119 A1Published application
Semiconductor device with copper fuse section
OwnerMakoto Sasakiinventor
Life of this patent
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Abstract
A semiconductor memory device includes a dielectric film, first and second wiring lines, a copper fuse section and an opening. The first and second wiring lines are provided in the dielectric film. The copper fuse section is provided in the dielectric film, and is connected to the first and second wiring lines. The opening is formed to the copper fuse section through the dielectric film. A laser beam is irradiated to the copper fuse section through the opening in an oxygen atmosphere.
Claims14
A semiconductor memory device comprising:
- a dielectric film;
- first and second wiring lines provided in said dielectric film;
- a copper fuse section provided in said dielectric film, and connected to said first and second wiring lines;
- and
- an opening formed to said copper fuse section through said dielectric film, wherein a laser beam is irradiated to said copper fuse section through said opening in an oxygen atmosphere.
2 more elements
A method of converting a fuse section into a high resistance section, comprising:
- providing a copper fuse section in a dielectric film, an opening is formed to said copper fuse section through said dielectric film;
- and
- irradiating a laser beam to said copper fuse section through said opening such that said copper fuse section is oxidized.
Dependencies are inferred from the claim text.