Method for fabricating forward and reverse blocking devices
AssigneeIXYS Corporation
InventorsUlrich Kelberlau, Peter Ingram, Nathan Zommer
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Abstract
A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.
Claims24
A power device, comprising:
- a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type;
- and
- a vertical diffusion region of second conductivity provided at a periphery the active region, the vertical diffusion region extending continuously from a top surface of the substrate to a bottom surface of the substrate, the vertical diffusion region including:
- an upper portion having a first depth, and
- a lower portion having a second depth that is substantially greater than the first depth.
A power device;
- comprising:
- a gate region, a source region, and a drain region provided in an active region of a semiconductor substrate of first conductivity type, the substrate having a front side and a backside;
- a scribe diffusion region of second conductivity type provided around the active region, the scribe diffusion region extending continuously from the front side of the substrate to the backside of the substrate, the scribe diffusion region comprising an impurity of first type and an impurity of second type different from the impurity of first type.
A method for fabricating a power device, comprising:
- providing a substrate of first conductivity, the substrate having a front side and a backside;
- forming a scribe diffusion region of second conductivity at a periphery of the substrate, the scribe diffusion region extending continuously from the front side to the backside of the substrate, wherein the scribe diffusion region includes an impurity of first type and an impurity of second type that is different than the impurity of first type.
A method for fabricating a power device, comprising:
- providing a substrate of first conductivity, the substrate having a front side and a backside;
- forming an aluminum structure at a scribe area on the backside of the substrate;
- and
- placing the substrate having the aluminum structure in an environment with a first temperature that is less than the melting point of aluminum to prevent the aluminum structure from melting.
Dependencies are inferred from the claim text.