High frequency semiconductor device

An HF semiconductor device comprising:

• a semiconductor substrate;
• an electroconductor layer provided on the semiconductor substrate;
• a first insulator layer for electrically insulating the electroconductor layer from the semiconductor substrate;
• a spiral wire provided on the semiconductor substrate opposite to the electroconductor layer;
• a second insulator layer for electrically insulating the spiral wire from the electroconductor layer and the semiconductor substrate;
• an HF-signal isolating section provided between the electroconductor layer and a ground potential to isolate an HF component flowing between the electroconductor layer and the ground potential;
• and
• wherein cutouts are provided in positions of the electroconductor layer opposite to the spiral wire, and the cutouts are provided to radially extend from a position opposite to the spiral wire as a center.

An HF semiconductor device comprising:

• a semiconductor substrate;
• a first insulator layer provided on the semiconductor substrate;
• an electroconductor layer provided on the first insulator layer;
• a second insulator layer provided on the electroconductor layer;
• a first wire provided on the second insulator layer opposite to the electroconductor layer;
• a dielectric layer provided on the first wire;
• a second wire provided on the dielectric layer opposite to the first wire;
• and
• an HF-signal isolating section provided between the electroconductor layer and a ground to isolate an HF component flowing between the electroconductor layer and the ground.