Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
AssigneePeregrine Semiconductor Corporation
InventorsJames S. Cable, Eugene F. Lyons, Michael A. Stuber, Mark L. Burgener
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Abstract
A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.
Claims12
A silicon-on-insulator metal oxide semiconductor device which is radiation hardened, comprising:
- an ultrathin silicon-on-sapphire substrate;
- and
- at least one P-channel MOS transistor fabricated in the ultrathin silicon layer, wherein the ultrathin silicon layer in the P-channel region of the transistor is characterized by a retrograde N-type dopant concentration profile.
A method for making a silicon-on-insulator metal oxide semiconductor device which is radiation hardened, comprising the steps of:
- providing an ultrathin silicon-on-sapphire substrate;
- forming a retrograde N-type dopant concentration profile in a region of the ultrathin silicon layer;
- and
- forming a P-channel MOS transistor in the ultrathin silicon layer, wherein at least a portion of the N-type retrograde dopant concentration profile region forms the P-channel region of the P-channel MOS transistor.
Dependencies are inferred from the claim text.