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US 2002/0171096 A1Published application
Schottky gate field effect transistor with high output characteristic
AssigneeNEC Corporation
InventorsAkio Wakejima, Kazuki Ota, Kohji Matsunaga, Walter Contrata, Masaaki Kuzuhara
Life of this patent
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Abstract
In a field effect transistor, there are provided a gate electrode on a Schottky layer over an InP channel layer over the substrate, and a field control electrode extending over an insulating layer and separated from the Schottky layer and being positioned between the gate electrode and the drain electrode for controlling an expansion of a space charge region in the channel layer.
Claims28
A field effect transistor including:
- a substrate;
- a channel layer over said substrate, and said channel layer comprising a first compound semiconductor having a larger band gap than GaAs
- a Schottky layer over said channel layer;
- a gate electrode having a Schottky junction with said Schottky layer;
- source and drain electrodes spatially distanced from each other and also from said gate electrode;
- an insulating layer extending over at least a first region of said Schottky layer, and said first region being positioned between said gate electrode and said drain electrode;
- and
- a field control electrode extending over said insulating layer and being separated from said Schottky layer, and said field control electrode being positioned between said gate electrode and said drain electrode for controlling a space charge region in said channel layer and under said at least first region.
5 more elements
A semiconductor device including:
- a substrate;
- a channel layer over said substrate, and said channel layer comprising a first compound semiconductor having a larger band gap than GaAs;
- a Schottky layer over said channel layer;
- a gate electrode having a Schottky junction with said Schottky layer
- source and drain electrodes spatially distanced from each other and also from said gate electrode;
- and
- a field controller for controlling an expansion of a space charge region in said channel layer and between said gate electrode and said drain electrode.
4 more elements
A field effect transistor including:
- a GaAs substrate;
- an InGaP channel layer over said GaAs substrate;
- a Schottky layer over said InGaP channel layer;
- a gate electrode having a Schottky junction with said Schottky layer
- source and drain electrodes spatially distanced from each other and also from said gate electrode;
- an insulating layer extending over said Schottky layer;
- and
- a field control electrode extending over said insulating layer and being separated from said Schottky layer by said insulating layer, and said field control electrode being positioned between said gate electrode and said drain electrode, and said field control electrode being spatially separated from said gate electrode and from said drain electrode, and said field control electrode being electrically coupled to said gate electrode, so that said field control electrode depends in potential on said gate electrode, said field control electrode being applied with a positive voltage for controlling an expansion of a space charge region in said channel layer between said gate electrode and said drain electrode.
5 more elements
A field effect transistor including:
- a GaAs substrate;
- an InGaP channel layer over said GaAs substrate;
- a Schottky layer over said InGaP channel layer;
- a gate electrode having a Schottky junction with said Schottky layer;
- source and drain electrodes spatially distanced from each other and also from said gate electrode;
- an insulating layer extending over said Schottky layer;
- and
- a field control electrode extending over said insulating layer and being separated from said Schottky layer by said insulating layer, and said field control electrode being positioned between said gate electrode and said drain electrode, and said field control electrode being spatially separated from said gate electrode and from said drain electrode, and said field control electrode being electrically isolated from said gate electrode, so that said field control electrode is independent in potential from said gate electrode, said field control electrode being applied with a positive voltage for controlling an expansion of a space charge region in said channel layer between said gate electrode and said drain electrode.
5 more elements
A field effect transistor including:
- a GaAs substrate;
- an InGaP channel layer over said GaAs substrate;
- a Schottky layer over said InGaP channel layer;
- a gate electrode having a Schottky junction with said Schottky layer;
- source and drain electrodes spatially distanced from each other and also from said gate electrode;
- and
- an insulating layer extending over said Schottky layer;
- wherein said gate electrode includes an extension portion which extends over said insulating layer toward said drain electrode, and said extension portion being separated from said Schottky layer by said insulating layer and also spatially separated from said drain electrode, and said extension portion controlling an expansion of a space charge region in said channel layer between said gate electrode and said drain electrode.
5 more elements
Dependencies are inferred from the claim text.