US 2002/0170678 A1 · Plasma processing apparatus

Abstract

The present invention is to provide a plasma processing apparatus, whose structure can be simplified, and further, which is capable of forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. In the plasma processing apparatus according to the invention, a ground electrode provided at a position opposite to a substrate mounting electrode is configured to be a counter electrode, whose potential is in a floating state, and radio frequency power is branched at an arbitrary position of the radio frequency antenna coil, which generates inductive discharge, into the counter electrode through a capacitor so as to share a part of the radio frequency power used for inductive discharge, thereby generating a self-bias in the counter electrode. In the system, there is provided a mechanism for controlling the radio frequency voltage to be applied to the floating electrode uniformly.

Claims9

Dependent claims

A plasma processing apparatus in which gas is introduced into a vacuum chamber so as to form inductively coupled discharge plasma by means of at least one radio frequency antenna coil to which a first radio frequency power source is connected, and a substrate mounting electrode is supplied with a radio frequency power from a second radio frequency power source connected thereto so as to generate a negative self-bias in the substrate mounting electrode, wherein a ground electrode is provided at the position opposite to the substrate mounting electrode and is arranged as an opposite electrode whose potential is kept in a floating state by a dielectric material, and a shunt is provided on a feed line between the radio frequency antenna coil and the first radio frequency power source for applying a part of radio frequency power from the radio frequency power source to the opposite electrode through a capacitor connected to the shunt, thereby generating a self-bias in the opposite electrode.

A plasma processing apparatus comprising:

a vacuum chamber having a plasma generating section in an upper portion thereof and a substrate mounting electrode section in a lower portion thereof;
at least one radio frequency antenna coil for generating plasma provided outside a dielectric wall of the plasma generating section, the antenna coil being connected to a radio frequency power source;
a substrate mounting electrode disposed in the substrate mounting electrode section, the substrate mounting electrode being connected to another radio frequency power source and applied with radio frequency bias power;
and
an opposite electrode disposed in the plasma generating section in a manner of opposing to the substrate mounting electrode,
wherein
the opposite electrode is a floating electrode, which is bonded in a sealed manner to an upper flange of the wall of the plasma generating section with an insulator interposed therebetween and whose potential is in a floating state,
a shunt is provided on a feed line between the antenna coil and the radio frequency power source connected to the antenna coil for applying a part of radio frequency power to the floating electrode through a variable capacitor provided on the shunt, and
control means is provided for monitoring radio frequency voltage to be applied to the floating electrode and controlling the radio frequency voltage uniformly.

6 more elements

A plasma processing apparatus comprising:

a vacuum chamber having a plasma generating section in an upper portion thereof and a substrate mounting electrode section in a lower portion thereof;
at least one radio frequency antenna coil for generating plasma provided outside a dielectric wall of the plasma generating section, the antenna coil being connected to a radio frequency power source;
and
a substrate mounting electrode disposed in the substrate mounting electrode section, the substrate mounting electrode being connected to another radio frequency power source and applied with radio frequency bias power,
wherein
a Faraday shield or a electrostatic field shield type floating electrode is provided inside the antenna coil,
a shunt is provided on a feed line between the antenna coil and the radio frequency power source connected to the antenna coil for applying a part of radio frequency power to the floating electrode through a variable capacitor provided on the shunt, and
control means is provided for monitoring radio frequency voltage to be applied to the floating electrode and controlling the radio frequency voltage uniformly.

5 more elements

Dependencies are inferred from the claim text.

Plasma processing apparatus

Life of this patent

Plasma processing apparatus

Life of this patent

Abstract

Claims9