Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same

A method of fabricating a liquid crystal display device comprising:

• forming a gate electrode on a substrate;
• forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate;
• forming an active area by patterning the amorphous silicon layer;
• forming a source electrode and a drain electrode on the active area;
• forming a passivation layer on the source electrode and the drain electrode and the gate insulating layer;
• forming a contact hole exposing a part of the drain electrode;
• forming an indium tin oxide layer on the passivation layer;
• and
• forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH, and water as an etchant.

A method of fabricating a liquid crystal display device comprising:

• forming a gate electrode on a substrate;
• forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate;
• forming an active area by patterning the amorphous silicon layer;
• forming a molybdenum source electrode and a molybdenum drain electrode on the active area;
• forming a passivation layer on the molybdenum source electrode and the molybdenum drain electrode and the gate insulating layer;
• forming a contact hole exposing a part of the drain electrode;
• forming an indium tin oxide layer on the passivation layer;
• and
• forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH and water as an etchant by using a spray process.