Etching method and etching apparatus, method for manufacturing semiconductor device, and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Tomita, Soichi Nadahara
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Abstract
In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.
Claims20
An etching method comprising the steps of:
- preparing a substrate having a surface on which a film made of an inorganic substance is formed;
- and
- wet-etching the film on the substrate by oxidation-reduction reaction involving oxygen, with use of an etching solution containing an oxidation agent which has an oxidation-reduction potential of 2V or more measured at 25° C., 1 atm.
An etching apparatus comprising:
- a substrate rotation mechanism for rotating a substrate to be processed, which has a thin film made of an inorganic substance, at a rotation speed of 100 rpm or more;
- and
- an ozone water supply mechanism provided on the substrate rotation mechanism, for supplying ozone water having a concentration or 5 ppm or more onto a surface of the substrate to be processed, thereby to etch the substrate.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first metal compound film on a semiconductor substrate, the first metal compound film being formed of metal elements, at least one of which has compound which is difficult to dissolve in water;
- forming a second metal compound film on the first metal compound film, the second metal compound film being formed of metal elements, each of which makes an easily water-soluble or a volatile compound;
- forming a protection film having a desired aperture, on the second metal compound film;
- and
- etching the second metal compound film exposed from the aperture, by a solution of water containing ozone.
A semiconductor device comprising:
- an insulating layer having a trench;
- a first metal compound layer formed on an inner surface of the trench;
- a second metal compound layer which is formed on the inner surface of the trench with the first metal compound inserted therebetween and extends on an upper surface of the insulating layer;
- a third metal compound layer which fills inside of the trench with the first and the second metal compound layer inserted therebetween and extends on the upper surface of the insulating layer with the second metal compound layer inserted therebetween;
- and
- a mask layer formed on the third metal compound layer and covering at least the third metal compound layer.
Dependencies are inferred from the claim text.