Method for forming a silicon dioxide-low k dielectric stack
OwnerTing-Chang Chang, Po-Tsun Liu +1inventors
InventorsTing-Chang Chang, Po-Tsun Liu, Yi-Shien Mor
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Abstract
A method for forming silicon dioxide-low k dielectric stack is provided. The present invention is characterized in that applying H2 plasma on a low k dielectric layer formed on a conductive interconnect layer to cover dangling bonds on the surface of the low k dielectric layer. Thereby, preventing the reaction between the low k dielectric layer and oxygen gas employed in a subsequent process for forming a cap layer of silicon dioxide occurring, and thus prohibiting oxygen gas damaging the low k dielectric layer.
Claims34
A method for forming a silicon dioxide-low k dielectric stack, comprising:
- providing a conductive interconnect layer;
- forming a low k dielectric layer over said conductive interconnect layer;
- applying H2 plasma on said low k dielectric layer;
- and
- forming a cap layer of silicon dioxide on said low k dielectric layer subsequent to applying said H2 plasma.
A method for forming a silicon dioxide-porous low k dielectric stack, comprising:
- providing an interconnect layer comprising aluminum metal lines;
- forming a liner layer of silicon dioxide on said interconnect layer;
- forming a porous low k dielectric layer on said liner layer of silicon dioxide;
- applying H2 plasma on said porous low k dielectric layer;
- and
- forming a cap layer of silicon dioxide on said porous low k dielectric layer subsequent to applying said H2 plasma.
Dependencies are inferred from the claim text.