Low dielectric constant shallow trench isolation
AssigneeMicron Technology, Inc.
InventorPaul A. Farrar
Life of this patent
Estimating the term…
Abstract
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device.
Claims31
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- and
- filling the trench with cells of gaseous components.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a polymeric material;
- and
- foaming the polymeric material.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with an aerogel material;
- and
- curing the aerogel material.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a first polymeric material;
- defining additional structures in the integrated circuit device;
- removing the first polymeric material;
- filling the trench with a second polymeric material;
- and
- foaming the second polymeric material.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a methylsilsequioxane material;
- defining additional structures in the integrated circuit device;
- removing the methylsilsequioxane material;
- filling the trench with a polymeric material;
- and
- foaming the polymeric material.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a polymeric material;
- defining additional structures in the integrated circuit device;
- removing the polymeric material;
- filling the trench with an aerogel material;
- and
- curing the aerogel material.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a polymeric material;
- exposing the polymeric material to a supercritical fluid, thereby forming a saturated polymeric material;
- and
- depressurizing the saturated polymeric material, thereby forming cells.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a polyimide material;
- exposing the polyimide material to a supercritical fluid, thereby forming a saturated polyimide material;
- and
- depressurizing the saturated polyimide material, thereby forming cells.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a polynorbomene material;
- exposing the polynorbornene material to a supercritical fluid, thereby forming a saturated polynorbornene material;
- and
- depressurizing the saturated polynorbomene material, thereby forming cells.
A method of isolating a first active region from a second active region in an integrated circuit device, comprising:
- forming a trench in a substrate, wherein the first active region is on a first side of the trench and the second active region is on a second side of the trench;
- filling the trench with a methylsilsesquioxane material;
- exposing the methylsilsesquioxane material to a supercritical fluid, thereby forming a saturated methylsilsesquioxane material;
- and
- depressurizing the saturated methylsilsesquioxane material, thereby forming cells.
Dependencies are inferred from the claim text.