Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first amorphous semiconductor film on an insulating film;
• providing the first amorphous semiconductor film with a metal element;
• crystallizing the first amorphous semiconductor film to form a first crystalline semiconductor film;
• forming a barrier layer on a surface of the first crystalline semiconductor film;
• forming a second semiconductor film containing a rare gas element on the barrier layer by a sputtering method;
• gettering the metal element so that the metal element in the first crystalline semiconductor film is reduced by moving the metal element to the second semiconductor film;
• and
• removing the second semiconductor film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first amorphous semiconductor film on an insulating film;
• providing the first amorphous semiconductor film with a metal element;
• crystallizing the first amorphous semiconductor film to form a first crystalline semiconductor film;
• forming a barrier layer on a surface of the first crystalline semiconductor film;
• forming a second semiconductor film containing a rare gas element and oxygen higher than 5×1018/cm3 on the barrier layer;
• gettering the metal element so that the metal element in the first crystalline semiconductor film is reduced by moving the metal element to the second semiconductor film;
• and
• removing the second semiconductor film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first amorphous semiconductor film on an insulating film;
• providing the first amorphous semiconductor film with a metal element;
• crystallizing the first amorphous semiconductor film to form a first crystalline semiconductor film;
• forming a barrier layer on a surface of the first crystalline semiconductor film;
• forming a second semiconductor film containing a rare gas element on the barrier layer by a sputtering method;
• irradiating the first crystalline semiconductor film with a light so that the metal element in the first crystalline semiconductor film is reduced by moving the metal element to the second semiconductor film;
• and
• removing the second semiconductor film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first amorphous semiconductor film on an insulating film;
• providing the first amorphous semiconductor film with a metal element;
• crystallizing the first amorphous semiconductor film to form a first crystalline semiconductor film;
• forming a barrier layer on a surface of the first crystalline semiconductor film;
• forming a second semiconductor film containing a rare gas element and oxygen higher than 5×1018/cm3 on the barrier layer;
• irradiating the first crystalline semiconductor film with a light so that the metal element in the first crystalline semiconductor film is reduced by moving the metal element to the second semiconductor film;
• and
• removing the second semiconductor film.