Method for inline monitoring of a device's pattern profile
OwnerHsin Yi Chang, Yun Hsiu Chen +1inventors
InventorsHsin Yi Chang, Yun Hsiu Chen, Lung Hui Tsai
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Abstract
A method for inline monitoring of a device's pattern profile is disclosed. An insulator is deposited on the patterned layer to be detected by high density plasma chemical vapor deposition. A defect measurement device or refraction measurement device is used to compare the difference of the insulator in nearby dies in corresponding local areas. The insulator deposited on the patterned layer reflects the abnormal pattern profile (such as under cut, footing, or taper) and the normal pattern profile of the patterned layer. Thus, the abnormal pattern profile can be detected and qualified by defect measurement or refraction measurement devices.
Claims10
A method for inline monitoring of a device's pattern profile, comprising:
- forming a patterned layer on a wafer, wherein the wafer comprises several dies;
- depositing an insulator on the patterned layer;
- and
- comparing the difference of the insulator in nearby dies in corresponding local areas.
A method for inline monitoring of a device's pattern profile, comprising:
- forming a patterned layer on a wafer, wherein the wafer comprises several dies;
- depositing an insulator on the patterned layer by high density plasma chemical vapor deposition;
- and
- comparing the height difference of the insulator in nearby dies in corresponding local areas.
Dependencies are inferred from the claim text.