US 2002/0164548 A1Published application

Wet etch compatible deep UV photoresist compositions

AssigneeArch Specialty Chemicals, Inc.

InventorsSanjay Malik, Karin Schlicht, Michelle Elderkin, Stefano Volpi

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Abstract

Wet etch processes utilize compatible deep UV photoresist compositions having binder resins that are either: (A) tertiary-butyl acrylate polymers comprising the monomeric units: 1 1 2 3 where 0.5≦a≦0.7, 0.15≦b≦0.3, 0.1≦c≦0.2, 0.3≦b+c≦0.5; R is H or a C1-C4 alkyl group; R1 is H, methyl or CH2OR2; each R3 is independently H, methyl, CH2OR2, CH2CN, CH2X, or CH2COOR4 where X is Cl, I, Br or F; R2 is H or a C1-C4 alkyl group; R4 is C1-C4 alkyl group; R5 is an isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, phenethyl or tetrahydrofurfural group, or (B) polymers of tertiary-butyl cinnamate that have monomeric units of: 2 4 5 6 wherein a=0.3 to 0.9, b=0.1 to 0.7, and c=0 to 0.3; R1 is H, methyl, or CH2OR4; R 4 is H or C1-C4 alkyl group; R2 is H, methyl, CH2OR4, CH2CN, or CH2X; X is Cl, I, Br, F, or CH2COOR5; R5 is C1-C4 alkyl group; and R3 is isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, or phenethyl.

Claims20

Dependent claims

In a process for wet etch pattern transfer from a deep UV photoresist to a substrate by use of a wet etchant, the improvement comprising employing as the deep UV photoresist on the substrate a photoresist coating from a radiation-sensitive composition comprising a binder resin, a photoacid generator, and a solvent for the binder resin and photoacid generator, wherein the binder resin comprises a polymer of the radiation-sensitive composition is selected from the groups consisting of:

(A) a tertiary-butyl acrylate polymer comprising the monomeric units:
15
where 0.5≦a≦0.7, 0.15≦b≦0.3, 0.1≦c≦0.2, 0.3≦b+c≦0.5;
R is H or a C1-C4 alkyl group;
R1 is selected from the group consisting of H, methyl or CH2OR2;
each R3 is independently selected from the group consisting of H, methyl, CH2OR2, CH2CN, CH2X, or CH2COOR4 where X is selected from the group consisting of Cl, I, Br or F;
R2 is selected from the group consisting of H or a C1-C4 alkyl group;
R4 is selected from the group consisting of C1-C4 alkyl group;
and R5 is selected from the group consisting of an isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, phenethyl or tetrahydrofurfural group, and
(B) a polymer of tertiary-butyl cinnamate that has monomeric units of:
16
wherein a=0.3 to 0.9, b=0.1 to 0.7, and c=0 to 0.3;
R1 is selected from the group consisting of H, methyl, or CH2OR4;
R4 is selected from the group consisting of H or C1-C4 alkyl group;
R2 is selected from the group consisting of H, methyl, CH2OR4, CH2CN, or CH2X;
X is selected from the group consisting of Cl, I, Br, F, or CH2COOR5;
R5 is selected from the group consisting of C1-C4 alkyl group;
and R3 is selected from the group consisting of isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, or phenethyl.

15 more elements

A method for forming a pattern comprising the steps of:

(1) coating a semiconductor substrate with radiation-sensitive photoresist composition comprising a polymer binder resin, a photoacid generator, and a solvent for the binder resin and photoacid generator, wherein the binder resin is a polymer selected from the group consisting of:
(A) a tertiary-butyl acrylate polymer comprising the monomeric units:
20
where 0.5≦a≦0.7, 0.15≦b≦0.3, 0.1≦c≦0.2, 0.3≦b+c≦0.5;
R is H or a C1-C4 alkyl group;
R1 is selected from the group consisting of H, methyl or CH2OR2;
each R3 is independently selected from the group consisting of H, methyl, CH2OR2, CH2CN, CH2X, or CH2COOR4 where X is selected from the group consisting of Cl, I, Br or F;
R2 is selected from the group consisting of H or a C1-C4 alkyl group;
R4 is selected from the group consisting of C1-C4 alkyl group;
and R5 is selected from the group consisting of an isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, phenethyl or tetrahydrofurfural group, and
(B) a polymer of tertiary-butyl cinnamate that has monomeric units of:
21
wherein a=0.3 to 0.9, b=0.1 to 0.7, and c=0 to 0.3;
R1 is selected from the group consisting of H, methyl, or CH2OR4;
R4 is selected from the group consisting of H or C1-C4 alkyl group;
R2 is selected from the group consisting of H, methyl, CH2OR4, CH2CN, or CH2X;
X is selected from the group consisting of Cl, I, Br, F, or CH2COOR5;
R5 is selected from the group consisting of C1-C4 alkyl group;
and R3 is selected from the group consisting of isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, or phenethyl;
(2) forming a resist pattern on the semiconductor substrate by exposing the photoresist coating to deep UV radiation and contacting the exposed photoresist coating to a developer to expose a portion of the photoresist substrate;
and
(3) wet etching said exposed portion of said semiconductor substrate with a wet etchant by using the resist pattern as an etching mask.

19 more elements

Dependencies are inferred from the claim text.