Dual damascene using removable via studs
AssigneeAdvanced Micro Devices, Inc.
InventorsTodd P. Luckanc, Scott A. Bell, Christopher F. Lyons, Marina V. Plat, Ramkumar Subramanian
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Abstract
A dual damascene process is described. A sacrificial post is formed using a photolithographic process which may include exposing photoresist through a bright field photomask. An interlevel dielectric, such as a low-k dielectric, is formed on the post, and a trench etched exposing the post. The post is then removed, thereby forming a hole. A conducting layer is then formed in the hole and the trench.
Claims42
A method of forming a semiconductor device comprising:
- providing a first conducting layer over a substrate;
- forming a post over the first conducting layer;
- forming an inter-level dielectric (ILD) over the first conducting layer and the post;
- forming a trench in the ILD thereby exposing the post;
- removing the post thereby forming a hole over the first conducting layer;
- and
- forming a second conducting layer in the trench and the hole to electrically connect to the first conducting layer.
A method of forming a semiconductor device comprising:
- providing a first conducting layer over a substrate;
- forming a post over the first conducting layer;
- forming a low-k inter-level dielectric (ILD) layer over the first conducting layer and the post;
- forming a trench in the low-k ILD thereby exposing the post;
- etching and thereby removing the post to form a hole over the first conducting layer, where the etching is selective to the post over the low-k ILD;
- and
- forming a second conducting layer in the trench and the hole to electrically connect to the first conducting layer.
A method of forming a semiconductor device comprising:
- providing a first conducting layer over a substrate;
- forming a post material over the first conducting layer;
- forming a photoresist layer over the post material;
- directing electromagnetic radiation through a photomask with a post pattern to the photoresist layer;
- developing the photoresist to form a photoresist mask over the post material;
- etching the post material using the photoresist mask as an etch mask to form a post over the first conducting layer;
- forming an inter-level dielectric (ILD) over the first conducting layer and the post;
- forming a trench in the ILD thereby exposing the post;
- removing the post thereby forming a hole over the first conducting layer;
- and
- forming a second conducting layer in the trench and the hole to electrically connect to the first conducting layer.
A method of forming a semiconductor device comprising:
- providing a first conducting layer over a substrate;
- forming a post over the first conducting layer;
- forming an inter-level dielectric (ILD) over the first conducting layer and the post;
- forming a first hole in the ILD thereby exposing the post;
- removing the post thereby forming a second hole in the first hole and over the first conducting layer;
- and
- forming a second conducting layer in the first hole and the second hole to electrically connect to the first conducting layer.
Dependencies are inferred from the claim text.