Bi-layer photolithographic process
AssigneeUnited Microelectronics Corp.
InventorsChih-Yung Lin, Chun Cheng Chen
Life of this patent
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Abstract
A bi-layer photolithographic process. A substrate having a material layer waiting to be patterned is provided. A non-photosensitive polymer layer and a top photoresist layer are sequentially formed over the material layer. A photo-exposure of the top photoresist layer is carried out followed by a photoresist development to form a patterned top photoresist layer that exposes a portion of the non-photosensitive polymer layer. Using the patterned top photoresist layer as a mask, a dry etching process is conducted using the patterned top photoresist layer as a mask and O2/HBr as gaseous etchants. A portion of the non-photosensitive photoresist layer is removed to expose a portion of the material layer.
Claims18
A bi-layer photolithographic process, comprising:
- providing a substrate having a material layer waiting to be patterned thereon;
- forming a non-photosensitive polymer layer over the material layer;
- forming a top photoresist layer over the non-photosensitive polymer layer;
- performing a photo-exposure and transferring a pattern to the top photoresist layer such that the top photoresist layer is divided into exposed areas and unexposed areas;
- developing the photo-exposed top photoresist layer to remove the top photoresist layer in the unexposed areas while retaining the top photoresist layer in the exposed areas;
- and
- performing a dry etching to remove a portion of the non-photosensitive polymer layer and expose a portion of the material layer, using the patterned top photoresist layer as a mask and gaseous oxygen (O2) and hydrogen bromide (HBr) as dry-etching agents.
A bi-layer photolithographic process, comprising:
- providing a substrate having a material layer waiting to be patterned thereon;
- forming a non-photosensitive polymer layer over the material layer;
- forming a top photoresist layer over the non-photosensitive polymer layer;
- performing a photo-exposure to transfer a pattern to the top photoresist layer such that the top photoresist layer is divided into exposed areas and unexposed areas;
- developing the photo-exposed top photoresist layer to remove the top photoresist layer in the exposed areas while retaining the top photoresist layer in the unexposed areas;
- and
- performing a dry etching to remove a portion of the non-photosensitive polymer layer and expose a portion of the material layer, using the patterned top photoresist layer as a mask and gaseous oxygen (O2) and hydrogen bromide (HBr) as dry-etching agents.
Dependencies are inferred from the claim text.