Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)

A sequential method for depositing a thin film onto a substrate in a chamber comprising:

• introducing a first reactant gas into said chamber;
• adsorption of at least one monolayer of said first reactant gas onto said substrate;
• removal of excess said first reactant gas from said chamber introduction of at least one ion generating feed gas into said chamber;
• introduction of at least one radical generating feed gas into said chamber;
• generating a plasma from said ion generating feed gas and said radical generating feed gas to form ions and radicals;
• exposing said substrate to said ions and said radicals;
• modulating said ions;
• and
• reacting said adsorbed monolayer of said first reactant gas with said ions and said radicals to deposit said thin film.