Integrated circuit base transistor structure and associated programmable cell library

An integrated circuit comprising:

• a plurality of circuit cells, each of at least a subset of the plurality of circuit cells being formed as an interconnection of multiple base transistor structures arranged immediately adjacent to one another;
• a given one of the base transistor structures comprising:
• a plurality of source regions;
• a plurality of drain regions, each adjacent to a corresponding one of the source regions;
• and
• at least first and second elongated gates, the first and second gates each overlying a corresponding subset of the source and drain regions, the first and second gates each extending longitudinally along a first axis from a first end adjacent one of the source and drain regions to a second end extending past another of the source and drain regions, the first and second gates being separated from one another at the second ends thereof;
• the base transistor structure being substantially symmetric about the first axis.

An article of manufacture comprising one or more software programs for use in designing an integrated circuit, wherein the one or more software programs when executed provide at least a library comprising a plurality of circuit cells, each of at least a subset of the plurality of circuit cells being formed as an interconnection of multiple base transistor structures arranged immediately adjacent to one another, a given one of the base transistor structures comprising:

• a given one of the base transistor structures comprising:
• a plurality of source regions;
• a plurality of drain regions, each adjacent to a corresponding one of the source regions;
• and
• at least first and second elongated gates, the first and second gates each overlying a corresponding subset of the source and drain regions, the first and second gates each extending longitudinally along a first axis from a first end adjacent one of the source and drain regions to a second end extending past another of the source and drain regions, the first and second gates being separated from one another at the second ends thereof;
• the base transistor structure being substantially symmetric about the first axis.