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US 2002/0163038 A1Published application
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsHoon Chang, Dae Byung Kim
Life of this patent
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Abstract
The semiconductor device and the method for fabricating the same includes a trench formed with a predetermined depth in a region of a substrate. A device isolation film is formed as a sidewall type spacers at both sides of the trench. A second conductivity type semiconductor film is formed in the trench. A second conductivity type transistor is formed in first and second regions of the substrate, and a first conductivity type transistor formed in a third region of the substrate.
Claims7
A semiconductor device comprising:
- a first conductivity type substrate comprising first and second regions on which a second conductivity type transistor will be formed and a third region on which a first conductivity type transistor will be formed between the first and second regions;
- a trench formed to a predetermined depth in the third region of the first conductivity type substrate;
- a device isolation film formed at both sides of the trench as sidewall type spacers;
- a second conductivity type semiconductor film formed in the trench;
- a second conductivity type transistor formed in the first and second regions of the first conductivity type substrate;
- and
- a first conductivity type transistor formed in the third region of the first conductivity type substrate.
4 more elements
A method for fabricating a semiconductor device comprising:
- forming a trench having a predetermined depth in a third region of a first conductivity type substrate, the first conductivity type substrate comprising first and second regions on which a second conductivity type transistor will be formed, and a third region on which a first conductivity type transistor will be formed between the first and second regions;
- forming an insulating film on an entire surface including the trench and etching-back the insulating film to form a device isolation film at both sides of the trench;
- forming a second conductivity type semiconductor film in the trench;
- forming a second conductivity type transistor in the first and second regions of the first conductivity type substrate;
- and
- forming a first conductivity type transistor in the third region of the first conductivity type substrate.
3 more elements
Dependencies are inferred from the claim text.