Semiconductor substrate-supporting apparatus

Abstract

A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.

Dependencies are inferred from the claim text.