Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films

A method of forming a boron insitu doped amorphous or polycrystalline silicon film, said method comprising the steps of:

• generating a pressure in a deposition chamber;
• heating a substrate to a temperature;
• flowing a reactant gas mix comprising a silicon source gas, diborane, and a carrier gas into said deposition chamber;
• and controlling the pressure, the temperature, and the flow rate of said reactant gas mix into said chamber so that said reactant gas mix has a residence time in said chamber of less than or equal to 3.0 seconds.

A method of forming a boron doped amorphous or polycrystalline silicon film, said method comprising the steps of;

• heating a substrate to a temperature between 580-750° C. in a deposition chamber;
• generating a pressure between 10-50 torr in said deposition chamber;
• providing a silicon source gas into said deposition chamber, wherein said silicon source gas has a partial pressure of between 1-5 torr;
• providing diborane into said deposition chamber, wherein said diborane has a partial pressure of between 0.005-0.05 torr in said deposition chamber;
• and
• providing a hydrogen carrier gas into said deposition chamber wherein said hydrogen carrier gas has a partial pressure of between 9-48 torr in said deposition chamber.

A substrate processing system comprising:

• a substrate holder, located within a chamber, that holds a substrate during substrate processing;
• a gas delivery system for introducing a reactant gas mix into said chamber to deposit a layer over said substrate;
• a pump coupled to a gas outlet for controlling the chamber pressure;
• a controller for controlling said gas delivery system and said pump;
• a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:
• instructions for controlling said gas delivery system to introduce a reactant gas mix including a silicon source gas, a boron source gas and a carrier gas into said chamber to deposit a insitu boron doped silicon film over a substrate positioned on said substrate holder, said instructions introducing a said reactant gas into said chamber at a first rate and controlling said chamber pressure so that said reactant gas mix has a residence time of less than or equal to 3.0 seconds.

A substrate processing system comprising:

• a substrate holder, located within a chamber, that holds a substrate during substrate processing;
• a gas delivery system for introducing a reactant gas mix into said chamber to deposit a layer over said substrate;
• a pump coupled to a gas outlet for controlling the chamber pressure;
• a controller for controlling said gas delivery system and said pump;
• a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said processing system, said computer-readable program comprising:
• instructions for controlling said gas delivery system to introduce a reactant gas mix including a silicon source gas, a boron source gas and a carrier gas into said chamber to deposit a insitu boron doped silicon film over a substrate positioned on said substrate holder, said instructions introducing a said reactant gas into said chamber at a first rate and controlling said chamber pressure so that said reactant gas mix has a velocity of at least 4 inches/sec.

A substrate processing system comprising:

• a substrate holder, located within a chamber, that holds a substrate during substrate processing;
• a gas delivery system for introducing a reactant gas mix into said chamber to deposit a layer over said substrate;
• a pump coupled to a gas outlet for controlling the chamber pressure;
• a controller for controlling said gas delivery system and said pump;
• a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said chemical vapor deposition reactor system, said computer-readable program comprising:
• instructions for controlling said gas delivery system to introduce a reactant gas mix including a silicon source gas, a boron source gas and a carrier gas into said vacuum chamber to deposit a insitu boron doped silicon film over a substrate positioned on said substrate holder, said instructions introducing said reactant gas mix into said chamber at a first rate and controlling said chamber pressure so that said reactant gas mix has a total pressure of less than 50 torr and a silicon source gas partial pressure of between 1-5 torr and a boron source gas partial pressure of between 0.005 - 0.05 torr in said vacuum chamber.