Process for reducing the critical dimensions of integrated circuit device features
AssigneeUzodinma Okoroanyanwu to Advanced Micro Devices, Inc.
InventorsUzodinma Okoroanyanwu, Chih-Yuh Yang, Jeffrey A. Shields
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Abstract
A process for forming sub-lithographic features in an integrated circuit is disclosed herein. A process for enhancing the etch trimmability and the etch stability of features patterned on a photoresist layer is also disclosed herein. The process includes curing a photoresist layer after patterning and development but before an etch process is performed thereon. By controlling the formation of the cured portions of the features patterned on the photoresist layer, the features can be trimmed to sub-lithographic critical dimensions without pattern deformation or occurrence of other failure mechanisms.
Claims20
A method for achieving a sub-lithographic critical dimension in an integrated circuit device feature, the integrated circuit device feature formed on a semiconductor wafer using a feature patterned on a photoresist layer, the method comprising the steps of:
- curing the feature patterned on the photoresist layer with an electron beam;
- and
- trimming the cured feature to form a trimmed feature, wherein the sub-lithographic critical dimension of the trimmed feature is dependent on a dose of the electron beam.
A feature patterned on a photoresist layer having enhanced etch stability and trimmability in an etch process, the feature including a top region and the feature formed by the process comprising, irradiating the feature patterned on a photoresist layer with an electron beam before the etch process, wherein at least the top region of the feature is cross-linked to the point of complete decomposition to form a cross-linked top region.
An integrated circuit fabrication process, th e process comprising:
- curing a patterned photoresist layer with an electron beam, the patterned photoresist layer disposed over a substrate;
- trimming the cured photoresist layer with a plasma etch;
- and
- transferring a pattern of the trimmed photoresist layer to the substrate, wherein a critical dimension of the transferred pattern on the substrate has a sub-lithographic dimension and is a function of a dose of the electron beam in the curing step.
Dependencies are inferred from the claim text.