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US 2002/0160615 A1Published application
Semiconductor apparatus and method for fabricating the same
AssigneeOki Electric Industry Co., Ltd.
InventorsShinzi Kawada, Hiroyuki Kawano
Life of this patent
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Abstract
First, a substrate, on which a plurality of semiconductor devices is formed, is provided. Next, a first etching treatment is carried out to the substrate with a first etching gas comprising CF4 to form a base trench having a rounded-off upper edge or tapered upper edge. A second etching treatment is carried out to the substrate to form a trench region at the base trench so that the trench region has a rounded-off upper edge. And then, an insulating layer is formed on the substrate to fill up the trench region therewith.
Claims27
A semiconductor apparatus, comprising:
- a substrate on which a plurality of semiconductor devices are formed;
- a mask layer formed on the substrate to have an opening which corresponds to a device isolating region;
- a trench region formed by etching the substrate using the mask layer as an etching mask;
- and
- an insulating layer filled in the trench region so that an upper edge of the trench region is not exposed.
2 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- performing a first etching treatment to the substrate with a first etching gas comprising CF4 to form a base trench having a rounded-off upper edge or tapered upper edge;
- performing a second etching treatment to the substrate to form a trench region at the base trench so that the trench region has a rounded-off upper edge;
- and
- forming an insulating layer on the substrate to fill up the trench region therewith.
2 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- performing a first etching treatment to the substrate with a first etching gas comprising HBr and CF4 to form a base trench having a rounded-off upper edge;
- performing a second etching treatment to the substrate using a second etching gas excluding CF4 to form a trench region at the base trench so that the trench region has a rounded-off upper edge;
- and
- forming an oxide layer on the substrate to fill up the trench region therewith, wherein
- the ratio of flow rate of HBr and CF4 in the firs etching gas is between 1:2 and 1:5.
3 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- performing a first etching treatment to the substrate with a first etching gas comprising HBr, CF4 and CH2F2 to form a base trench having a tapered upper edge;
- performing a second etching treatment to the substrate using a second etching gas excluding CF4 and CH2F2 to form a trench region at the base trench;
- performing a thermal oxidation treatment to the substrate so that the trench region has a rounded-off upper edge;
- and
- forming an oxide layer onto the substrate to fill up the trench region therewith, wherein
- the ratio of flow rate of CF4 and CH2F2 in the first etching gas is between 2:1 and 3:1.
4 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- providing a mask layer on the substrate to have an opening corresponding to a device isolating region;
- performing a first etching treatment to the substrate using the mask layer as an etching mask to form a trench region on the substrate;
- enlarging the opening of the mask layer so that an upper edge of the trench region are fully exposed;
- and
- providing an insulating layer on the substrate so that the insulating layer extends outwardly from the trench region to cover the upper edge of the trench region completely.
3 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- providing a mask layer on the substrate to have an opening corresponding to a device isolating region;
- performing a first etching treatment to the substrate using the mask layer as an etching mask to form a trench region on the substrate;
- enlarging the opening of the mask layer by an isotropic etching process so that an upper edge of the trench region are fully exposed;
- and
- forming an insulating layer on the substrate so that the insulating layer extends outwardly from the trench region to cover the upper edge of the trench region completely.
3 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- providing a mask layer on the substrate to have an opening corresponding to a device isolating region;
- performing a first etching treatment to the substrate using the mask layer as an etching mask to form a trench region on the substrate;
- enlarging the opening of the mask layer by an isotropic etching process so that an upper edge of the trench region are fully exposed;
- performing a thermal oxidation treatment to the substrate so that the trench region has a rounded-off upper edge;
- and
- forming an insulating layer on the substrate so that the insulating layer extends outwardly from the trench region to cover the upper edge of the trench region completely.
4 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- providing a mask layer on the substrate to have an opening corresponding to a device isolating region;
- performing a first etching treatment to the substrate using the mask layer as an etching mask to form a trench region on the substrate;
- enlarging the opening of the mask layer by an isotropic etching process so that an upper edge of the trench region are fully exposed;
- performing a second etching treatment to the substrate so that the upper edge of the trench region is tapered;
- performing a thermal oxidation treatment to the substrate treatment so that the tapered upper edge of the trench region is rounded off;
- and
- forming an insulating layer on the substrate so that the insulating layer extends outwardly from the trench region to cover the upper edge of the trench region completely.
5 more elements
A method for fabricating a semiconductor apparatus, comprising the steps of:
- providing a substrate on which a plurality of semiconductor devices are formed;
- providing a mask layer on the substrate to have an opening corresponding to a device isolating region;
- performing a first etching treatment to the substrate using the mask layer as an etching mask to form a trench region on the substrate;
- performing a dry type of first thermal oxidation treatment to the substrate to round off an upper edge of the trench region;
- enlarging the opening of the mask layer by an isotropic etching process so that an upper edge of the trench region are fully exposed;
- performing a wet type of second thermal oxidation treatment to the substrate so as to further round off the upper edge of the trench region;
- and
- forming an insulating layer on the substrate so that the insulating layer extends outwardly from the trench region to cover the upper edge of the trench region completely.
5 more elements
Dependencies are inferred from the claim text.