US 2002/0160614 A1 · Method of forming an interlayer dielectric film

Abstract

In a method for forming an interlayer dielectric film, an insulating film is deposited on a semiconductor substrate that has a metal wiring pattern. The insulating film is polished by CMP until exposing an upper portion of the wiring pattern. A spin on glass composition, which includes polysilazane, is coated over the polished insulating material and exposed portions of the wiring pattern to form a film. The film is then pre-baked in a temperature range of 50 to 350° C., and then hard-baked in a temperature range of 300 to 500° C. After the hard-baking, the film is then heat-treated in an oxidation atmosphere. With the hard-baking, gasses of the coating of film may be removed so that the amount of gas generated during a subsequent anneal or heat-treating process may be reduced. Accordingly, particle contaminants may be reduced by such process in addition to providing a means for reduced risk of crack formation.

Claims36

Dependent claims

A method of forming an interlayer, the method comprising:

preparing a substrate with a wiring pattern;
forming an insulating film on the substrate;
chemical mechanical polishing the insulating film and exposing an upper portion of the wiring pattern;
coating the polished insulation and exposed portion of the wiring pattern with spin on glass composition to form a film;
the coating using polysilazane in the spin on glass composition;
pre-baking the film in a temperature range of 50 to 350° C.;
after the pre-baking, hard-baking the film in a temperature range of 300 to 500° C.;
and
heat-treating the film in an oxidation atmosphere.

6 more elements

Dependencies are inferred from the claim text.

Method of forming an interlayer dielectric film

Life of this patent

Method of forming an interlayer dielectric film

Life of this patent

Abstract

Claims36