Manufacturing method of semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorYasutaka Kobayashi
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Abstract
A gate electrode layer (103, 104) formed on a semiconductor substrate (101) is etched. A gate electrode is formed while forming metal system sub-products (107) onto the side walls of the gate electrode layer. The metal system sub-products formed on the side walls of the gate electrode layer are oxidized. The oxidized metal system sub-products are removed by a solution whose etching rate for the gate insulative film (102) has been adjusted to 10 Å/min or less.
Claims20
A manufacturing method of a semiconductor device in which a gate electrode at least a part of which is made of a metal material is formed on a gate insulative film formed on a semiconductor substrate, comprising the steps of:
- forming the gate electrode while forming metal system sub-products onto side walls of said gate electrode, by etching a gate electrode layer formed on said semiconductor substrate;
- oxidizing said metal system sub-products formed on the side walls of said gate electrode;
- and
- removing said oxidized metal system sub-products by a solution whose etching rate for said gate insulative film is adjusted to be equal to or less than 10 Å/min.
A manufacturing method of a semiconductor device in which a gate electrode at least a part of which is made of a metal material is formed on a gate insulative film formed on a semiconductor substrate, comprising the steps of:
- sequentially forming the gate insulative film, a gate electrode layer at least a part of which is made of a metal material, and a silicon nitride film or a silicon oxide film onto said semiconductor substrate;
- etching said silicon nitride film or silicon oxide film into a predetermined shape;
- forming the gate electrode while forming metal system sub-products onto side walls of said gate electrode, by etching said gate electrode layer with using said silicon nitride film or silicon oxide film etched in said predetermined shape as a mask;
- oxidizing said metal system sub-products formed on the side walls of said gate electrode;
- and
- removing said oxidized metal system sub-products.
A manufacturing method of a semiconductor device having a gate electrode which is formed on a gate oxide film on a semiconductor substrate and has a metal material layer, comprising the steps of:
- depositing a gate electrode layer for said gate electrode onto said gate oxide film;
- forming a reflection preventing film layer and a photoresist material layer made of an organic material onto said gate electrode layer, respectively;
- forming a resist mask in a desired shape from said photoresist material layer by a photolithography technique;
- performing a selective etching process to said reflection preventing film layer by using said resist mask as an etching mask, thereby forming an etching mask corresponding to said resist mask from said reflection preventing film layer;
- removing said resist mask, thereafter, performing an etching process to remove a portion exposed from said etching mask in said gate electrode layer under said etching mask by using said etching mask obtained from said reflection preventing film layer, and sequentially growing etching protective films of a metal system onto side portions in a remaining portion of said gate electrode layer locating under said etching mask during said etching process in order to protect the side portions from said etching process;
- oxidizing said metal system protective films;
- and
- removing said oxidized protective films from said remaining portion of said gate electrode layer.
Dependencies are inferred from the claim text.