Method for fabricating capacitor of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorYeon Woo Cheong
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Abstract
A method for fabricating a capacitor of a semiconductor device, includes providing a semiconductor substrate, forming a polysilicon layer pattern on the semiconductor substrate, forming a first HSG structure on an inner surface of the polysilicon layer pattern, forming a second HSG structure on the first HSG structure and an outer surface of the polysilicon layer pattern to produce a lower electrode of the capacitor, forming a dielectric film on the second HSG structure, and forming an upper electrode on the dielectric film.
Claims20
A method for fabricating a capacitor of a semiconductor device, comprising the steps of:
- providing a semiconductor substrate;
- forming a polysilicon layer pattern on the semiconductor substrate;
- forming a first HSG structure on an inner surface of the polysilicon layer pattern;
- forming a second HSG structure on the first HSG structure and an outer surface of the polysilicon layer pattern to produce a lower electrode of the capacitor;
- forming a dielectric film on the second HSG structure;
- and
- forming an upper electrode on the dielectric film.
A method for fabricating a capacitor of a semiconductor device, comprising the steps of:
- providing a semiconductor substrate;
- forming an insulating film having a contact hole on the semiconductor substrate;
- forming a polysilicon layer and a first HSG structure on the insulating film having the contact hole;
- selectively patterning the polysilicon layer and the first HSG structure until a top surface of the insulating film is exposed to form a cylinder type lower electrode of the capacitor;
- removing the insulating film;
- forming a second HSG structure on the first HSG structure and the polysilicon layer;
- forming a dielectric film over the second HSG structure;
- and
- forming an upper electrode over the dielectric film.
A method for fabricating a capacitor of a semiconductor device, comprising the steps of:
- providing a semiconductor substrate;
- forming a first interlayer insulating film on the semiconductor substrate;
- forming a first contact hole by selectively patterning the first interlayer insulating film;
- forming a contact plug in the first contact hole to be electrically in contact with the semiconductor substrate;
- forming a second interlayer insulating film on the first interlayer insulating film including the contact plug;
- selectively patterning the second interlayer insulating film to form a second contact hole to expose a lower electrode region of the first interlayer insulating film including the contact plug;
- forming a polysilicon layer on the exposed surface of the second interlayer insulating film including the second contact hole;
- forming a first HSG structure on the polysilicon layer;
- selectively removing the sacrificial film to form a sacrificial film on the first HSG structure;
- selectively removing exposed portions of the first HSG structure and the polysilicon layer using the sacrificial film as a mask;
- removing the sacrificial film and the second interlayer insulating film;
- forming a second HSG structure on the first HSG structure and an exposed surface of the polysilicon layer;
- and
- forming a dielectric film and an upper electrode over the resultant structure.
Dependencies are inferred from the claim text.