Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film

Abstract

A method of producing a semiconductor film of Cu(MIII) (MVI)2 wherein MIII represents In1−xGax where x is between 0 and 1 and MVI represents SeyS1−y where y is between 0.5 and 1, including the steps of: (a) depositing on a substrate a precursor Cu(MIII) (MVI)2 film having a molar ratio of Cu:MIII of less than 1.0:1.0 but not less than 1.0:1.4 and (b) annealing the precursor film at a temperature of 400-500° C. in an oxygen-containing atmosphere to form a buffer layer of indium oxide and/or gallium oxide and a Cu(In1-xGax) (SeyS1-y)2 film interposed between the substrate and the buffer layer. The buffer layer may be removed by etching with an acid.

Dependencies are inferred from the claim text.