Exposure method for forming pattern for IC chips on reticle by use of master masks
AssigneesKabushiki Kaisha Toshiba, Dai Nippon Printing Co., Ltd.
InventorsSuigen Kyoh, Soichi Inoue
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Abstract
There is provided a method which forms master masks used when a pattern of size larger than a region which can be exposed at one time is exposed on a to-be-exposed object. The pattern of the size larger than the region which can be exposed at one time is divided into a region of low repetitiveness and a region of high repetitiveness. A pattern of the region of low repetitiveness is drawn on at least one first master mask. Further, a pattern of the region of high repetitiveness is drawn on at least one second master mask.
Claims28
A method which forms master masks used when a pattern of size larger than a region which can be exposed at one time is exposed on a to-be-exposed object, comprising:
- dividing the pattern of the size larger than the region which can be exposed at one time into a region of low repetitiveness and a region of high repetitiveness,
- drawing a pattern of the region of low repetitiveness on at least one first master mask, and
- drawing a pattern of the region of high repetitiveness on at least one second master mask.
A method which forms master masks used when a pattern of size larger than a region which can be exposed at one time is exposed on a to-be-exposed object, comprising:
- dividing the pattern of the size larger than the region which can be exposed at one time into a region of low repetitiveness and a region of high repetitiveness,
- drawing a pattern of the region of high repetitiveness on at least one master mask, and
- drawing a pattern of the region of low repetitiveness on a portion of the master mask other than a portion of the master mask on which the pattern of the region of high repetitiveness is drawn.
An exposure method which exposes a pattern of size larger than a region which can be exposed at one time on a to-be-exposed object by using master masks on which the pattern divided into patterns lying within a range of the region which can be exposed at one time is drawn, comprising:
- dividing the pattern of the size larger than the region which can be exposed at one time into a region of high repetitiveness and a region of low repetitiveness,
- exposing a pattern of the region of low repetitiveness on the to-be-exposed object by use of at least one first master mask on which the pattern of the region of low repetitiveness is drawn, and
- commonly exposing a pattern of the region of high repetitiveness on the to-be-exposed object by use of at least one second master mask on which the pattern of the region of high repetitiveness is drawn.
An exposure method which exposes a pattern of size larger than a region which can be exposed at one time on a to-be-exposed object by using master masks on which the pattern divided into patterns lying within a range of the region which can be exposed at one time is drawn, comprising:
- dividing the pattern of the size larger than the region which can be exposed at one time into a region of high repetitiveness and a region of low repetitiveness, and
- exposing a pattern of the region of low repetitiveness on the to-be-exposed object by use of a master mask having a first portion on which a pattern of the region of high repetitiveness is drawn and a second portion on which the pattern of the region of low repetitiveness is drawn and commonly exposing the pattern of the region of high repetitiveness on the to-be-exposed object by use of the master mask.
A method which forms master masks by correcting master masks on which one pattern divided into a plurality of portions is drawn, comprising:
- drawing a pattern obtained by correcting to-be-corrected portions of the above one pattern on one master mask when the to-be-corrected portions of the above one pattern lie over a plurality of master masks.
A device mask comprising:
- a plurality of master masks on which patterns of a dicing region divided according to a region which can be exposed at one time are respectively drawn.
A master mask comprising:
- a first portion on which a pattern of a functional element is drawn, and
- a second portion which is different from said first portion having the pattern of the functional element drawn thereon and on which patterns of a dicing region divided according to a region which can be exposed at one time are drawn.
A semiconductor device manufacturing method comprising:
- forming a layer to be patterned on a substrate,
- coating a photoresist on the layer,
- exposing the photoresist via a reticle on which a circuit pattern is formed,
- developing the photoresist, and
- patterning the layer with the photoresist used as a mask,
- wherein the reticle is formed by use of master masks on which a pattern having size larger than a region which can be exposed at one time and divided into patterns lying within a range of the region which can be exposed at one time is drawn and said reticle exposure method includes dividing the pattern of the size larger than the region which can be exposed at one time into a region of high repetitiveness and a region of low repetitiveness, exposing a pattern of the region of low repetitiveness on the reticle by use of at least one first master mask on which the pattern of the region of low repetitiveness is drawn, and commonly exposing a pattern of the region of high repetitiveness on the reticle by use of at least one second master mask on which the pattern of the region of high repetitiveness is drawn.
A semiconductor device manufacturing method comprising:
- forming a layer to be patterned on a substrate,
- coating a photoresist on the layer,
- exposing the photoresist via a reticle on which a circuit pattern is formed,
- developing the photoresist, and
- patterning the layer with the photoresist used as a mask,
- wherein the reticle is formed by use of master masks on which a pattern having size larger than a region which can be exposed at one time and divided into patterns lying within a range of the region which can be exposed at one time is drawn and said reticle exposure method includes dividing the pattern of the size larger than the region which can be exposed at one time into a region of high repetitiveness and a region of low repetitiveness, and exposing a pattern of the region of low repetitiveness on the reticle by use of a master mask including a first portion on which the pattern of the region of high repetitiveness is drawn and a second portion on which the pattern of the region of low repetitiveness is drawn and commonly exposing the pattern of the region of high repetitiveness on the reticle by use of the master mask.
A semiconductor device manufacturing method comprising:
- forming a layer to be patterned on a substrate,
- coating a photoresist on the layer,
- dividing a pattern of size larger than a region which can be used to expose the photoresist at one time into a region of high repetitiveness and a region of low repetitiveness,
- exposing a pattern of the region of low repetitiveness on the photoresist by use of at least one first mask on which the pattern of the region of low repetitiveness is drawn,
- commonly exposing a pattern of the region of high repetitiveness on the photoresist by use of at least one second mask on which the pattern of the region of high repetitiveness is drawn,
- developing the photoresist, and
- patterning the layer with the photoresist used as a mask.
A semiconductor device manufacturing method comprising:
- forming a layer to be patterned on a substrate,
- coating a photoresist on the layer,
- dividing a pattern of size larger than a region which can be used to expose the photoresist at one time into a region of high repetitiveness and a region of low repetitiveness,
- exposing a pattern of the region of low repetitiveness on the photoresist by use of a mask including a first portion on which a pattern of the region of high repetitiveness is drawn and a second portion on which the pattern of the region of low repetitiveness is drawn and commonly exposing the pattern of the region of high repetitiveness on the photoresist by use of the mask,
- developing the photoresist, and
- patterning the layer with the photoresist used as a mask.
Dependencies are inferred from the claim text.