US 2002/0158569 A1 · Light-emitting element

Abstract

A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.

Claims7

Dependent claims

A light-emitting element, comprising:

a transparent substrate,
a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and
an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer,
whereby said rare earth metal elements in said III-V nitride semiconductor layer are excited by electron beams from said irradiation source and a given fluorescence inherent to said rare earth metal elements are emitted.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/097,275Filed 15 Mar 2002

Priority

JP 2001-89,09227 Mar 2001

Published

31 Oct 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H01J 63/06
Cathode-ray or electron-stream lamps: lamps with luminescent screen excited by the ray or stream
B82Y 10/00
Nanotechnology for information processing, storage or transmission
H01J 2201/30469
Carbon types: carbon nanotubes
H10H 20/8252
Containing nitrogen, e.g. GaN: characterised by the dopants

Light-emitting element

Life of this patent

Light-emitting element

Life of this patent

Abstract

Claims7