Semiconductor structure and method for reducing charge damage
AssigneeMotorola, Inc.
InventorsJoseph Petrucci, John Maltabes, Karl Mautz, Alain Charles
Life of this patent
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Abstract
A semiconductor structure and a method for reducing charge damage during plasma etch processing are disclosed. Structures (22, 26, 28) for accumulating charge during plasma etch processing are provided on a semiconductor wafer (10), the structures (22, 26, 28) being electrically connected to device structures (30, 32).
Claims16
A semiconductor structure for reducing charge damage during plasma etch processing, wherein structures for accumulating charge during plasma etch processing are provided on a semiconductor wafer, the structures being electrically connected to device structures.
A method for reducing charge damage during plasma etch processing, the method comprising the steps of
- providing structures for accumulating charge on a semiconductor wafer,
- connecting the structures electrically to device structures,
- performing a plasma etch process, and
- maintaining the connection during the plasma etch process.
Dependencies are inferred from the claim text.