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US 2002/0158322 A1Published application
Low dielectric constant shallow trench isolation
AssigneeMicron Technology, Inc.
InventorPaul A. Farrar
Life of this patent
Estimating the term…
Abstract
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device.
Claims24
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench contains cells of gaseous components.
1 more element
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench is filled with a foamed polymeric material.
1 more element
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench is filled with a cured aerogel.
1 more element
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench is filled with an air gap.
1 more element
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench is filled with a foamed polyimide material.
1 more element
An electronic system, comprising:
- a processor;
- a circuit module having a plurality of leads coupled to the processor, and further having semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench contains cells of gaseous components;
- and
- a metal interconnect structure electrically in communication with a selected number of the plurality of semiconductor devices.
2 more elements
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench is filled with a foamed polynorbornene material.
1 more element
An electronic system, comprising:
- a processor;
- and
- a circuit module having a plurality of leads coupled to the processor, and further having a semiconductor die coupled to the plurality of leads, wherein the semiconductor die includes:
- an integrated circuit supported by a substrate and having a plurality of semiconductor devices, wherein at least two of the plurality of semiconductor devices are isolated by an interposing trench, and wherein the trench is filled with a foamed methylsilsesquioxane material.
1 more element
Dependencies are inferred from the claim text.