Semiconductor device having a trench isolation structure and method for fabricating the same

Abstract

A semiconductor device and its fabrication method are provided. A semiconductor device includes first and second trench regions formed in first and second areas of a semiconductor substrate, respectively. A first device isolation layer is formed in the first trench region and includes a first trench oxide layer formed on side walls of the first trench region. A first nitride liner is formed on the side walls of the first trench oxide layer and a first insulation layer pattern is formed on the first nitride liner to fill the first trench region. A second device isolation layer is formed in the second trench region and includes a second trench oxide layer formed on the side walls of the second trench region. A second nitride liner is formed on the side walls of the second trench oxide layer. A second insulation layer pattern is formed on the second nitride liner to fill the second trench region. The first trench oxide layer is substantially thicker than the second trench oxide.

Dependencies are inferred from the claim text.