US 2002/0158301 A1 · Semiconductor substrate with smooth trench

Abstract

A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that the width of the mask opening width is greater than the width of the trench. After that, the inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished to complete the substrate.

Claims3

Dependent claims

A semiconductor substrate comprising:

a trench formed in a semiconductor substrate, wherein the trench is open at an upper surface of the semiconductor substrate wherein a radius of curvature at a corner defined by a side face and a bottom face of the trench is 1.0 μm or more, and the maximum roughness height of an inner face of the trench is 3 nm or less;
and
a single crystal semiconductor layer filling the trench.

Dependencies are inferred from the claim text.

Facts

Application

10/132,298Filed 26 Apr 2002

Priority

JP 2000-1678225 Jun 2000

Published

31 Oct 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 10/40
Isolation regions in semiconductor bodies between components of integrated devices: isolation regions comprising polycrystalline semiconductor…
H10W 10/031
Manufacture or treatment: of isolation regions comprising PN junctions
H10W 10/041
Manufacture or treatment: of isolation regions comprising polycrystalline semiconductor materials
H10W 10/30
Isolation regions in semiconductor bodies between components of integrated devices: isolation regions comprising PN junctions

Semiconductor substrate with smooth trench

Life of this patent

Semiconductor substrate with smooth trench

Life of this patent

Abstract

Claims3