Method and system for providing reducing thinning of field isolation structures in a flash memory device

Abstract

A method and system for providing a Flash memory device is disclosed. The Flash memory device includes a core and a periphery. The method and system include providing the core for the Flash memory device and providing a plurality of isolation structures. A portion of the plurality of isolation structures is for isolating a plurality of devices at the periphery of the Flash memory device. Each of the plurality of isolation structures includes a corner and an oxide filler. The method and system further include providing the plurality of isolation structures by processing the plurality of isolation structures to reduce thinning of the oxide filler in proximity to the corner of the isolation structure.

Dependencies are inferred from the claim text.