Light-emitting semiconductor device and method of fabrication
OwnerTetsuji Moku, Kohji Ohtsuka +2inventors
InventorsTetsuji Moku, Kohji Ohtsuka, Masataka Yanagihara, Masaaki Kikuchi
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Abstract
A low-resistance silicon baseplate (11) has formed thereon a buffer layer 12 in the form of an altering lamination of AlN sublayers (12a) and GaN sublayers (12b). On this buffer layer there are formed an n-type semiconductor region (13) of gallium nitride, an active layer (14) of gallium indium nitride, and a p-type semiconductor region (15) of gallium nitride, in that order. An anode (17) is formed on the p-type semiconductor region (15), and a cathode (18) on the baseplate (11).
Claims5
A light-emitting semiconductor device having a gallium nitride-based compound semiconductor, characterized by comprising:
- a baseplate (11) made from a silicon compound or silicon containing impurities and having a low resistivity;
- a buffer layer (12) formed on one major surface of said baseplate and having a first layer (12a) of AlxGa1−xN, where 0<x≦1, and a second layer (12b) of GaN or AlyGa1−yN, where y<x and 0<y<1;
- a semiconductor region (10) disposed on said buffer layer and containing a plurality of gallium nitride-based compound semiconductors for emission of light;
- a first electrode (17) formed on part of said semiconductor region (10);
- and
- a second electrode (18) formed on another major surface of said baseplate.
A method of fabricating a light-emitting semiconductor device having a gallium nitride-based composed semiconductor, characterized by comprising the steps of:
- providing a baseplate (11) of monocrystalline silicon containing impurities and having a low resistivity;
- forming on one major surface of said baseplate (11) a buffer layer (12) in the form of an alternation of at least one first sublayer (12a) and at least one second sublayer (12b) by a vapor phase growth method, said first sublayer (12a) being composed of AlxGa1−xN, where 0<x≦1, said second sublayer (12b) being composed of GaN or AlyGa1−yN, where y<x and 0<y<1;
- forming on said buffer layer (12) by a vapor phase growth method a semiconductor region (10) composed of a plurality of gallium nitride-based compound layers for emission of light;
- and
- forming a first electrode (17) on part of a surface of said semiconductor region (10), and a second electrode (18) on another major surface of said substrate (11).
Dependencies are inferred from the claim text.