Method for producing silicon epitaxial wafer

Abstract

There is provided a novel manufacturing process for an epitaxial wafer having an IG ability, wherein heat treatment is applied at a temperature in a range of from 450° C. to 750° C. to an epitaxial wafer in which oxygen precipitation nuclei are reduced in an epitaxial growth step so as to form new oxygen precipitation nuclei therein, and oxygen precipitation proceeds in a device fabrication process subsequent to the heat treatment, especially oxide precipitates being effectively increased even when a wafer with a comparatively low oxygen concentration is used as a silicon substrate. A heat treatment at a temperature in a range of from 450° C. to 750° C. is applied to a silicon epitaxial wafer obtained by forming an epitaxial layer on a silicon substrate with an interstitial oxygen concentration in a range of from 4×1017/cm3 to 10×1017/cm3 at a temperature of 1000° C. or higher.

Dependencies are inferred from the claim text.