Semiconductor optical amplifier and semiconductor laser
AssigneeNEC Corporation
InventorKiichi Hamamoto
Life of this patent
Estimating the term…
Abstract
A semiconductor optical amplifier includes (a) a basic mode waveguide region which provides a basic mode to a guide wave light, (b) a first multi-mode waveguide region which has a greater waveguide width than that of the basic mode waveguide region, is optically connected to the basic mode waveguide region, and provides a mode including a multi-mode, to the guided wave light, and (c) a second multi-mode waveguide region which has a greater waveguide width than that of the first multi-mode waveguide region, is optically connected to the first multi-mode waveguide region, and provides a mode including a multi-mode, to the guided wave light.
Claims24
A semiconductor optical amplifier comprising:
- (a) a basic mode waveguide region which provides a basic mode to a guide wave light;
- (b) a first multi-mode waveguide region which has a greater waveguide width than that of said basic mode waveguide region, is optically connected to said basic mode waveguide region, and provides a mode including a multi-mode, to said guided wave light;
- and
- (c) a second multi-mode waveguide region which has a greater waveguide width than that of said first multi-mode waveguide region, is optically connected to said first multi-mode waveguide region, and provides a mode including a multi-mode, to said guided wave light.
A semiconductor optical amplifier comprising:
- (a) a basic mode waveguide region which provides a basic mode to a guide wave light;
- (b) a first multi-mode waveguide region which has a greater waveguide width than that of said basic mode waveguide region, is optically connected to said basic mode waveguide region, and provides a mode including a multi-mode, to said guided wave light;
- and
- (c) a second multi-mode waveguide region which has a greater waveguide width than that of said first multi-mode waveguide region, is optically connected to said first multi-mode waveguide region, and provides a mode including a multi-mode, to said guided wave light,
- wherein at least one of said first and second multi-mode waveguide regions is comprised of a plurality of such sub-regions that a sub-region located closer to an output end of said semiconductor optical amplifier has a greater waveguide width.
A semiconductor laser comprising:
- (a) a basic mode waveguide region which is covered at a rear end thereof with an all-reflection coating and at a front end thereof with a non-reflection coating, and provides a basic mode to a guide wave light;
- (b) a first multi-mode waveguide region which has a greater waveguide width than that of said basic mode waveguide region, is optically connected to said basic mode waveguide region, and provides a mode including a multi-mode, to said guided wave light;
- and
- (c) a second multi-mode waveguide region which has a greater waveguide width than that of said first multi-mode waveguide region, is optically connected to said first multi-mode waveguide region, and provides a mode including a multi-mode, to said guided wave light.
A semiconductor laser comprising:
- (a) a basic mode waveguide region which is covered at a rear end thereof with an all-reflection coating and at a front end thereof with a non-reflection coating, and provides a basic mode to a guide wave light;
- (b) a first multi-mode waveguide region which has a greater waveguide width than that of said basic mode waveguide region, is optically connected to said basic mode waveguide region, and provides a mode including a multi-mode, to said guided wave light;
- and
- (c) a second multi-mode waveguide region which has a greater waveguide width than that of said first multi-mode waveguide region, is optically connected to said first multi-mode waveguide region, and provides a mode including a multi-mode, to said guided wave light,
- wherein at least one of said first and second multi-mode waveguide regions is comprised of a plurality of such sub-regions that a sub-region located closer to an output end of said semiconductor optical amplifier has a greater waveguide width.
Dependencies are inferred from the claim text.