Semiconductor device provided with fuse and method of disconnecting fuse
AssigneeFujitsu Limited of Kawasaki
InventorsTsutomu Tatematsu, Kengi Togashi, Masayuki Nakada, Toyoji Sawada, Kazuo Sukegawa, Tomoyuki Yamada, Yoshikazu Arisaka
Life of this patent
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Abstract
A high-strength protective member made of tungsten is disposed under a disconnecting point of a fuse. This protective member is formed simultaneously with formation of a via contact portion which connects the fuse with wiring, for example.
Claims13
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed on the semiconductor substrate;
- a fuse formed on the insulating film;
- and
- a protective member formed by stronger material than the insulating film and disposed under a disconnecting point of the fuse.
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on the semiconductor substrate;
- lower wiring formed on the first insulating film;
- a second insulating film formed on both of the first insulating film and the lower wiring;
- a fuse formed on the second insulating film;
- a via contact portion formed inside the second insulating film to connect the fuse and the lower wiring electrically;
- and
- a protective member formed by stronger material than the second insulating film and disposed under the fuse.
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on the semiconductor substrate;
- a fuse formed on the first insulating film;
- a protective member formed by stronger material than the first insulating film and disposed under the fuse;
- a second insulating film formed on both of the first insulating film and the fuse;
- wiring formed on the second insulating film;
- and
- a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically.
A method of disconnecting a fuse of a semiconductor device, the semiconductor device including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, wiring formed on the first insulating film, a second insulating film formed on both of the first insulating film and the wiring, a fuse formed on the second insulating film, and a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically,
- wherein the fuse is disconnected by irradiating a laser onto a node of the fuse with the via contact portion.
A method of disconnecting a fuse of a semiconductor device, the semiconductor device including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, wiring formed on the first insulating film, a second insulating film formed on both of the first insulating film and the wiring, a fuse formed on the second insulating film, a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically, and a plurality of protective members formed by stronger material than the second insulating film and disposed separately from one another under the fuse,
- wherein the fuse is disconnected by irradiating a laser onto at least one portion directly above the protective member out of the plurality of protective members.
A method of disconnecting a fuse of a semiconductor device, the semiconductor device including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, wiring formed on the first insulating film, a second insulating film formed on both of the first insulating film and the wiring, a fuse formed on the second insulating film, a via contact portion formed inside the second insulating film to connect the fuse and the wiring electrically, and a plurality of protective members formed by stronger material than the second insulating film and disposed separately from one another under the fuse,
- wherein the fuse is disconnected by irradiating a laser onto a portion of the fuse between the plurality of protective members.
Dependencies are inferred from the claim text.