Semiconductor device

Abstract

Provided are a semiconductor device in which a fuse that has been necessary in a conventional manner is removed and an initial resistance value can be maintained even when stress is applied by packaging or the like, a high-precision bleeder resistance circuit capable of maintaining an accurate voltage division ratio, and a high-precision semiconductor device that employs the bleeder resistance circuit, such as a voltage detector or a voltage regulator. The semiconductor device including a resistor is characterized in that: the resistor has such a construction that a P-type resistor formed from a P-type semiconductor and an N-type resistor formed from an N-type semiconductor are integrated via an insulating film; the P-type resistor is disposed at a low potential side and the N-type resistor is disposed at a high potential side; and a laser beam or the like is irradiated to the insulating film portion to destroy insulating property to thereby achieve conductivity between the P-type and N-type resistors. Also, it is characterized in that a gate electrode of a MOS transistor is formed of a P-type polysilicon thin film having the same high concentration impurity as that of the region where the P-type resistor is in contact with a metal wiring, and particularly in that a current driving capacity of a driver MOS is enhanced.

Dependencies are inferred from the claim text.