Thin-film transistor and method of manufacturing the same

A thin-film transistor comprising:

• a glass substrate;
• and
• formed at an upper part of said glass substrate, a channel region, a source region, a drain region, an insulating layer and electrodes, wherein:
• said channel region, said source region and said drain region comprise polycrystalline silicon,
• said glass substrate comprises an unannealed glass substrate, and
• said insulating layer covers said channel region.

A process of manufacturing a thin-film transistor, comprising the steps of:

• (1) forming an amorphous silicon layer at an upper part of an unannealed glass substrate;
• (2) irradiating the amorphous silicon layer by laser light to form a polycrystalline silicon layer;
• (3) forming a channel region, a source region and a drain region at predetermined positions of the polycrystalline silicon layer;
• (4) oxidizing a surface of the polycrystalline silicon layer at least at its channel region at a temperature of 500° C. or below to form a first insulating layer;
• (5) forming a second insulating layer on the first insulating layer;
• (6) forming a gate region on the second insulating layer at its position corresponding to the channel region;
• and
• (7) forming an interlaminar insulating layer to cover the gate region, and thereafter forming corresponding electrodes so as to provide their electrical interconnection with the source region, the drain region and the gate region.