Semiconductor device

Abstract

A semiconductor device includes a substrate and a semiconductor layer of a first conductivity type, formed over the substrate via an insulating layer, the semiconductor layer having a protective diode. The protective diode has a first diffusion layer of a second conductivity type, formed in the semiconductor layer, a second diffusion layer of the second conductivity type, formed in the semiconductor layer, the second diffusion layer being isolated from the first diffusion layer, a third diffusion layer of the first conductivity type, formed in a region of the semiconductor layer, the region being sandwiched between the first and the second diffusion layers, the third diffusion layer being contact with the second diffusion layer, a first electrode formed as being contact with the first diffusion layer and a second electrode formed as being contact with the second and the third diffusion layers. The second diffusion layer may be formed as surrounding the first diffusion layer but being isolated from the first diffusion layer.

Dependencies are inferred from the claim text.