Semiconductor device
AssigneeNEC Electronics Corporation
InventorMototsugu Okushima
Life of this patent
Estimating the term…
Abstract
The electrostatic protection device provided between an input/output terminal and an internal circuit of a semiconductor device according to the present invention has a first insulated gate field effect transistor (MOS transistor) and a second MOS transistor that are connected mutually in parallel between an input/output wiring connected to the input/output terminal and an electrode wiring of a prescribed potential, where the first MOS transistor and the second MOS transistor are MOS transistors of the same channel type, the second MOS transistor has s higher drive capability than the first MOS transistor, and the electrostatic protection device is formed such that it is started by the first MOS transistor.
Claims10
An electrostatic protection device provided between an input/output terminal and an internal circuit of a semiconductor device comprising:
- a first insulated gate field effect transistor (MOS transistor) and a second MOS transistor connected mutually in parallel between an input/output wiring connected to said input/output terminal and an electrode wiring of a prescribed voltage, where
- said first MOS transistor and said second MOS transistor are MOS transistors of the same channel type, said second MOS transistor has a higher drive capability than said first MOS transistor, and the electrostatic protection device is formed such that its operation is started by said first MOS transistor.
Dependencies are inferred from the claim text.