US 2002/0153349 A1 · Plasma processing method and apparatus

Abstract

A plasma processing method includes exhausting interior of a vacuum chamber while supplying gas into the vacuum chamber, and while controlling the interior of the vacuum chamber to a pressure, applying a high-frequency power of 100 kHz to 100 MHz to a coil provided in a vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum chamber, and thus generating plasma in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

Claims28

Dependent claims

A plasma processing method comprising:

exhausting interior of a vacuum chamber while supplying gas into the vacuum chamber;
and
while controlling the interior of the vacuum chamber to a pressure, applying a high-frequency power of 100 kHz to 100 MHz to a coil provided in a vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum chamber, and thus generating plasma in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

A plasma processing apparatus comprising:

a vacuum chamber;
a gas supply equipment for supplying gas into the vacuum chamber;
an exhaust equipment for exhausting the vacuum chamber;
a pressure-controlling valve for controlling the vacuum chamber to an internal pressure;
a substrate electrode for placing thereon a substrate in the vacuum chamber;
a dielectric cylinder provided so as to face the substrate electrode;
a coil provided inside the dielectric cylinder and outside the vacuum chamber;
and
a high-frequency power supply equipment capable of supplying a high-frequency power of 100 kHz to 100 MHz to the coil.

6 more elements

Dependencies are inferred from the claim text.

Plasma processing method and apparatus

Life of this patent

Plasma processing method and apparatus

Life of this patent

Abstract

Claims28