Method of fabricating semiconductor device
AssigneeNEC Corporation
InventorsYasuhiro Ono, Ken Tokashiki
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Abstract
A high-dielectric-constant film etching method realizing a high etching rate and, moreover, etching of a highly anisotropic shape is provided. At the time of etching a high-dielectric-constant film, a mask made of an inorganic material is used, a mixed gas of a fluorine gas or fluorine compound gas and an inert gas is used as an etching gas, gaseous oxygen is added to the mixed gas, and the high-dielectric-constant film is etched with the resultant gas.
Claims5
A method of fabricating a semiconductor device, for etching a high-dielectric-constant film by using a mask made of an inorganic material and using, as an etching gas, a mixed gas of a fluorine gas or fluorine compound gas and an inert gas,
- wherein gaseous oxygen is added to said mixed gas, and said high-dielectric-constant film is etched with the resultant gas.
Dependencies are inferred from the claim text.