Dry etching method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMitsuhiro Okuni
Life of this patent
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Abstract
When the Cu-containing aluminum film is dry-etched with etching gas containing chlorine gas, the gas stay time τ of the etching gas staying in the chamber, which is expressed by P·V/Q, where P being the chamber pressure (unit: Pa), V the chamber volume (unit: L) and Q the total flow of etching gas (unit: Pa·L/sec), is from 0.15 seconds to 0.30 seconds inclusive.
Claims10
A dry etching method for dry-etching a Cu-containing aluminum film on a substrate held in a chamber by introducing etching gas containing at least chlorine in said chamber to generate plasma,
- wherein a gas stay time τ (=P·V/Q) is from 0.15 seconds to 0.30 seconds inclusive, P being a pressure in said chamber (unit:
- Pa), V being a volume of said chamber (unit:
- L) and Q being a total etching gas flow (unit:
- Pa·L/sec).
A dry etching method for dry-etching a Cu-containing aluminum film on a substrate held in a chamber by introducing etching gas containing at least chlorine in said chamber to generate plasma,
- wherein a gas stay time τ (=P·V/Q, where 0.93≦P≦1.86) is from 0.15 seconds to 0.30 seconds inclusive, P being a pressure in said chamber (unit:
- Pa), V being a volume of said chamber (unit:
- L) and Q being a total etching gas flow (unit:
- Pa·L/sec).
Dependencies are inferred from the claim text.